METHOD OF MAKING UNDOPED, ALLOYED AND DOPED CHALCOGENIDE FILMS BY MOCVD PROCESSES

摘要

A method of making Undoped, Alloyed and Doped Chalcogenide Films by CVD and particularly a film of GeSbTe which is a phase change material. These films are useful in electronic memory devices and other applications. In the method gas or vapor phase precursors of the elements are transported to a reaction chamber where they are deposited on a heated substrate under controlled conditions.