METHOD AND APPARATUS FOR DEPOSITING DOPED AND UNDOPED GLASSY CHALCOGENIDE FILMS AT SUBSTANTIALLY ATMOSPHERIC PRESSURE

摘要

Glassy chalcogenide films like copper-doped arsenic selenide, useful in vidicons and amorphous, current-controlled switches and hitherto obtainable only through time-consuming vacuum-deposition techniques, are obtained by heating and reacting in an open tube a first compound (arsine, stibine, phosphine, or the like) with a second compound (hydrogen selenide, hydrogen sulfide, or the like). Hydrogen gas is preferably used as a flush gas, and the dopant is preferably supplied in vapor form so that the amount thereof in the film can be readily controlled.