Rapid thermal (RT) MOCVD of undoped and Al doped ZnO thin films

摘要

Undoped and aluminum doped zinc oxide thin films were deposited on Si (100) and borosilicate glass substrates by using a novel RT-MOCVD technique, which is based on the use of the thermal radiation of tungsten lamps for substrate heating. The films were deposited from the acetylacetonates of zinc and aluminum which were used as precursors in the presence of oxygen. As result, well ordered and homogeneous ZnO films were grown. The undoped films show a preferred orientation on both substrates while the grains of the polycrystalline aluminum doped films are randomly ordered. Additionally whisker growth was observed for the doped films. As confirmed by EDX analysis, the amount of aluminum dopant was precisely controlled by varying the flows of transport gas through the evaporators. Finally, it has been found that all the films shown over 65 % optical transparency in the visible range.