Behaviour of CdS thin film transistors with Nd2O3 and La2O3 as GATE insulator

摘要

Nd2O3 and La2O3 have been used as gate insulator in CdS Thin-film Transistors(TFTs) fabricated in staggered electrode structure by multiple pump down ( MPD) method of vacuum evaporation. The characteristics of the devices are presented and electrical parameters like trans conductance, output resistance, amplification factor and gain band-width product are evaluated. Suitable theoretical model is employed to estimate the trap density, critical donor density, grain size and mobility.