The Optimization of the InGaAs/InP Material for Photodetectors

Ying Tian; Jun Deng; Linjie He; Yujie Du; Xiaochen Niu; Wei Xia

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The Optimization of the InGaAs/InP Material for Photodetectors

机译：用于光电探测器的InGaAs / InP材料的优化

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Room-temperature photoluminescence was used to study the influence of growth temperature on InP/InGaAs quantum well grown on InP substrate by method of metal-organic chemical vapor deposition(MOCVD).The growth temperature of InGaAs andInP was studied and

机译：采用金属有机化学气相沉积法（MOCVD）研究了室温光致发光对InP衬底上InP / InGaAs量子阱生长温度的影响。研究了InGaAs和InP的生长温度，

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来源
《Applied Physics Frontier》 |2015年第1期|共5页
作者
Ying Tian; Jun Deng; Linjie He; Yujie Du; Xiaochen Niu; Wei Xia;
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正文语种
中图分类物理学;
关键词
InP/InGaAs Quantum WellInfrared DetectorPL Spectrum;

机译：InP / InGaAs量子阱红外探测器PL光谱;

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专利

1. Transient simulation and optimization of InP/InGaAs unitraveling carrier photodetector [J] . 刘丽飒, 谢生, 毛陆虹, 光电子快报：英文版 . 2010,第003期

机译：InP / InGaAs组合载流子光电探测器的瞬态仿真与优化
2. Wavelength extended InGaAs/InAlAs/InP photodetectors using n-on-p configuration optimized for back illumination [J] . Yonggang Zhang, Yi Gu, Zhaobing Tian, Infrared physics and technology . 2008,第1期

机译：波长扩展的InGaAs / InAlAs / InP光电探测器，采用针对背面照明进行了优化的n-on-p配置
3. Optimization of surface passivation for InGaAs/InP pin photodetectors using ammonium sulfide [J] . D Sheela, Nandita DasGupta Semiconductor science and technology . 2008,第3期

机译：使用硫化铵优化InGaAs / InP引脚光电探测器的表面钝化
4. Optimization of metamorphic buffer layers for extended-InGaAs/InP photodetectors [C] . Seifert S., Ravash R., Franke D., International Conference on Indium Phosphide and Related Materials . 2013

机译：扩展InGaAs / InP光电探测器的变质缓冲层的优化
5. Material characterization of InGaAs/InP PIN photodetectors [D] . Chiu, Pit Ho Patrio 2002

机译：InGaAs / InP PIN光电探测器的材料表征
6. Optimization of MBE Growth Conditions of In0.52Al0.48As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers [O] . Piotr Gutowski, Iwona Sankowska, Tomasz Słupiński, 2019

机译：InGaAs / InAlAs / InP量子级联激光器的In0.52Al0.48As波导层MBE生长条件的优化
7. InP/InGaAs photodetector on SOI photonic circuitry [O] . Binetti, PRA Pietro, Leijtens, XJM Xaveer, Vries, de, T Tjibbe, 2010

机译：SOI光子电路上的InP / InGaAs光电探测器
8. Materials Growth and Optimization of InP/InGaAs and InAlAs/InGaAs HeterojunctionBipolar Transistor Structures by MOCVD Utilizing Carbon and Zinc Base Layer Dopants [R] . Givens, M. 1997

机译：利用碳和锌基层掺杂剂的mOCVD材料生长和优化Inp / InGaas和Inalas / InGaas异质结双极晶体管结构

The Optimization of the InGaAs/InP Material for Photodetectors

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