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Fast vapor phase growth of SiO2 nanowires via surface-flow on Ag core/SiO2 shell structure

机译:通过在Ag核/ SiO2壳结构上的表面流快速生长SiO2纳米线的气相生长

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Uniform, millimeter-long SiO2nanowires were grown from co-evaporation of Ag2O and SiO powders. The ‘frozen’ growth scenario by cooling enables revelation of the vapor-liquid-solid mechanism here in action, which is generally inaccessible due to the high temperature and high pressure condition. Ag core/SiO2 shell preformed in the vapor and wetting the substrate will expose its liquid Ag-core to catalyze nanowire growth, at a rate over 10 nm/s, via viscous flow of the encasing SiO2 layer which precipitates through a liquid neck zone. This method is characteristic of high-yield of catalytic seeds free from overgrowth or consuming, easy control of wire thickness by vapor pressure adjustment, enhanced rooting ability since catalyst deposition on substrate becomes dispensable, etc. Also spinning growth of nanowires observed in many other circumstances can be explained by the viscous flow mechanism.
机译:通过共同蒸发Ag2O和SiO2粉末,可以生长出毫米级的均匀SiO2纳米线。冷却导致的“冻结”增长情景使这里的汽-液-固机理得以发挥作用,由于高温和高压条件,这通常是无法获得的。通过包裹在整个液颈区中的SiO2层的粘性流动,在蒸汽中预先形成的Ag核/ SiO2壳层和润湿的基材将使其液态Ag-核暴露于以超过10 nm / s的速率催化纳米线生长的纳米线生长。该方法的特点是高产量,无过度生长或消耗的催化种子,易于通过蒸汽压力调节控制线粗,由于可在基材上沉积催化剂而提高了生根能力等特点。在许多其他情况下也观察到纳米线的纺丝生长可以用粘性流动机理来解释。

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