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Effects of growth parameters on SiC/SiO2 core/shell nanowires radial structures

机译:生长参数对SiC / SiO2芯/壳纳米线径向结构的影响

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Cubic silicon carbide - silicon dioxide core-shell nanowires have been synthesized in a thermal CVD system from carbon monoxide on silicon substrate. Using a non-ionic surfactant during the coating process of the substrate by the catalyst, the uniformity of the catalytic layer was improved, resulting in a more uniform nanowires growth. It is demonstrated that the core diameter is strongly correlated with the precursor concentration.
机译:已经在硅衬底上的一氧化碳的热CVD系统中合成了立方体碳化硅 - 二氧化硅芯壳纳米线。在通过催化剂的基材的涂布过程中使用非离子表面活性剂,改善了催化层的均匀性,导致更均匀的纳米线生长。证明芯直径与前体浓度强烈相关。

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