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Unconventional magnetization of Fe3O4 thin film grown on amorphous SiO2 substrate

机译:在非晶SiO2衬底上生长的Fe3O4薄膜的非常规磁化

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摘要

High quality single crystal Fe3O4 thin films with (111) orientation had been prepared on amorphous SiO2 substrate by pulsed laser deposition. The magnetization properties of the films are found to be unconventional. The Verwey transition temperature derived from the magnetization jump is around 140K, which is higher than the bulk value and it can be slightly suppressed by out-plane magnetic field; the out-of-plane magnetization, which is unexpectedly higher than the in-plane value, is also significantly increased as compared with the bulk value. Our findings highlight the unusual magnetization of Fe3O4 thin film grown on the amorphous SiO2 substrate.
机译:通过脉冲激光沉积在非晶SiO2衬底上制备了具有(111)取向的高质量单晶Fe3O4薄膜。发现膜的磁化性质是非常规的。磁化跃迁产生的Verwey转变温度约为140K,高于整体值,并且可以被平面磁场略微抑制。与面内值相比,出乎意料地高于面内值的面外磁化强度也显着增加。我们的发现突出了在非晶SiO2衬底上生长的Fe3O4薄膜的异常磁化。

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