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首页> 外文期刊>AIP Advances >The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films
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The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

机译:高磁阻锰掺杂ZnO薄膜的磁有序性

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摘要

We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (~40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.
机译:我们研究了Mn掺杂ZnO薄膜的磁有序性,该薄膜在300 K时表现出铁磁性,在5 K时表现出超顺磁性。我们通过极化磁渗理论和在金属下方的跳跃跃迁的可变范围来直接关联磁化和磁阻。到绝缘体的过渡。通过获得这两个模型之间的定性一致,我们将铁磁性归因于s-d交换诱导的自旋分裂,这由大的正磁阻(〜40%)表示。低温超顺磁性归因于载流子和非相互作用极化子簇的定位。该分析可以帮助理解掺杂或未掺杂的ZnO中是否存在铁磁性。

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