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The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

机译:高磁阻锰掺杂ZnO薄膜的磁有序

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摘要

We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.
机译:我们研究了Mn掺杂的ZnO薄膜的磁有序性,该薄膜在300 K时表现出铁磁性,在5 K时表现出超顺磁性。到绝缘体的过渡。通过获得这两个模型之间的定性一致,我们将铁磁性归因于s-d交换诱导的自旋分裂,这由大的正磁阻(〜40%)表示。低温超顺磁性归因于载流子和非相互作用极化子簇的定位。该分析可以帮助理解掺杂/未掺杂ZnO中铁磁性的存在与否。

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