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首页> 外文期刊>ACS Omega >Chemical Functionalization of Pentagermanene Leads to Stabilization and Tunable Electronic Properties by External Tensile Strain
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Chemical Functionalization of Pentagermanene Leads to Stabilization and Tunable Electronic Properties by External Tensile Strain

机译:戊五烯的化学功能化通过外部拉伸应变导致稳定化和可调电子性能

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Inspired by the unique geometry and novel properties of a newly proposed two-dimensional (2D) carbon allotrope called pentagraphene, we have performed first-principles calculations to study the structural stability and electronic properties of pentagermanene (pGe) modulated by chemical functionalization and biaxial tensile strain. It is observed that the 2D pGe is energetically unfavorable. However, the 2D pentagonal nanosheets can be stabilized by both hydrogenation and fluorination. Phonon dispersion spectrum and ab initio molecular dynamics simulations demonstrated that the dynamic and thermal stabilities of the two functionalized pGe nanostructures can be maintained even under a high temperature of 500 K. Our calculations revealed that both hydrogenated and fluorinated-pentagonal germanenes are semiconductors with indirect band gaps of 1.92 and 1.39 eV (2.60 and 2.09 eV by the hybrid functional), respectively. The electronic structures of the functionalized pGes can be effectively modulated by biaxial tensile strain, and an indirect to direct gap transition can be achieved for the hydrogenated pGe sheet by 6% biaxial strain. Moreover, the band gap of the hydrogenated pGe could be further tailored from 0.71 to 3.46 eV (1.16–4.35 eV by the hybrid functional) by heteroatom doping (C/Si/Sn/Pb), suggesting the semiconductor–insulator transition for differently doped nanostructures. As a result, the functionalized pGes are expected to have promising applications in nanoelectronics and nanomechanics.
机译:受新提出的称为碳五烯的二维(2D)碳同素异形体的独特几何形状和新颖性质的启发,我们进行了第一性原理计算,以研究由化学官能化和双轴拉伸作用调制的五碳杂戊烯(pGe)的结构稳定性和电子性质应变。观察到二维pGe在能量上是不利的。但是,二维五边形纳米片可以通过氢化和氟化来稳定。声子分散谱和从头算分子动力学模拟表明,即使在500 K的高温下,两个功能化的pGe纳米结构也可以保持动态和热稳定性。我们的计算表明,氢化和氟化五角锗烯都是具有间接能带的半导体间隙分别为1.92和1.39 eV(混合功能为2.60和2.09 eV)。可以通过双轴拉伸应变有效地调节功能化pGes的电子结构,并且可以通过6%的双轴应变实现氢化pGe片的间接到直接的间隙跃迁。此外,可以通过杂原子掺杂(C / Si / Sn / Pb)将氢化pGe的带隙进一步调整为0.71至3.46 eV(混合功能为1.16-4.35 eV),表明不同掺杂的半导体-绝缘体跃迁纳米结构。结果,功能化的pGes有望在纳米电子学和纳米力学中具有广阔的应用前景。

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