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Characterization and Structural Property of Indium Tin Oxide Thin Films

机译:氧化铟锡薄膜的表征与结构性能

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In this study, Indium Tin Oxide (ITO) thin films were deposited by electron beam evaporation on white glass substrates with thicknesses of about 50, 100 and 170 nm. We investigated structural properties by X-ray Diffraction (XRD) and X-ray reflectivity (XRR). The results showed that ITO thin films have a crystalline structure with a domain that increases in size with increasing thickness. For uniform electron density, as the thin film roughness increases, reflectivity curve slope also increases. Also thinner film has more fringes than thicker film. The roughness determines how quickly the reflected signal decays. XRR technique is more suitable for very thin films, approximately 20 nm and less.
机译:在这项研究中,通过电子束蒸发将氧化铟锡(ITO)薄膜沉积在厚度约为50、100和170 nm的白色玻璃基板上。我们通过X射线衍射(XRD)和X射线反射率(XRR)研究了结构性能。结果表明,ITO薄膜具有晶体结构,该晶体结构的畴随厚度的增加而增大。对于均匀的电子密度,随着薄膜粗糙度的增加,反射率曲线的斜率也增加。同样,较薄的薄膜比厚的薄膜具有更多的条纹。粗糙度决定了反射信号衰减的速度。 XRR技术更适合于约20 nm及以下的非常薄的薄膜。

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