POLYCRYSTALLINE ZnS THIN FILMS BY SCREEN PRINTING METHOD AND ITS CHARACTERIZATION

摘要

The II-VI compound semiconductors are of great importance due to their application in various electro-optic devices. Several methods have been used to prepare ZnS thin films. We have deposited ZnS films on ultra-clean glass substrate by Screen-printing method followed by sintering process. ZnS having wide band gap of 3.50-3.70 eV is a promising material to be used in photovoltaic devices, solar cells. The optical, structural and electrical properties of ZnS thin films have been examined. The optical band gap of these films is studied by reflection spectra in wavelength range 325-600nm using Tauc relation. The band gap does not show noticeable change with sintering temperature. The Wurtzite structure of ZnS films is confirmed by X-ray diffraction analysis. The electrical resistivities of the films were measured in vacuum by two-probe technique. Sintering is a very simple and viable method compared to other intensive methods. The results of the present investigation will be useful in characterizing the material ZnS for its applications in electro-optic devices, photovoltaic