PHOTOELECTROCHEMICAL PROPERTIES OF PULSE ELECTRODEPOSITED CADMIUM SELENIDE FILMS

摘要

CdSe films were deposited by the pulse plating technique in the presence of silicotungstic acid.The films deposited in the presence of silicotungstic acid exhibited hexagonal structure. The films exhibited a direct band gap of 1.67 eV. With addition of silsicotungstic acid, the average grain size decreased from 17.1 nm to 11.7 nm, and the grain became more homogeneous.The surface roughness decreased from 2.83 nm to 1.97 ater adding silicotungstic acid.The efficiency of the photoelectrochemical cells increases with addition of silico-tungstic acid