Physical properties of In2S3 thin films grown by chemical bath deposition at different temperatures

摘要

Indium sulphide thin films were deposited on SnO 2 :F/soda-lime glass substrates at different temperatures by chemical bath deposition. InCl 3 and C 2 H 5 NS were employed as indium and sulfur sources, respectively. The In 2 S 3 films were deposited at temperatures of: 60 °C, 70 °C and 80 °C. The as-grown films were annealed at 300 °C in nitrogen atmosphere. The physical properties were analyzed as a function of the bath temperature, before and after the thermal treatment. The X-ray diffraction and Raman characterizations indicate that In 2 S 3 films with tetragonal p hase were obtained. Atomic force microscopy showed that after the annealing features of grain coalescence on surface are present. The UV-Vis analysis indicated that after thermal treatment In 2 S 3 films have high transmission in the visible range and a bandgap above 2.50 eV.