TEST OF MICROWAVE PLASMA SULFUR INCORPORATION AT CIGS SURFACE

摘要

The test of micro wave plasma sulfur incorporation at CIGS surface has been performed , the XRF results sho ws that this technique is efficient in incorporating sulfur at CIGS surface even at low substrate temperature (350 ℃ ) with a short processing time. GIXRD analysis of sulfurized samples confirms that CIGSSe p hase is efficiently generated near the surface area, with the increase of substrate temperature, the content of CIGSSe phase could be increased and controlled. SEM cross-sectional images shows that microwave plasma sulfur incorporation can reduce the tiny grains remained at grain boundary and smooth the grain boundary surface. Microwave plasma sulfur incorporation shows its effectiveness in surface sulfurizing of CIGS.