Improved Passivant-induced Shunt Resistance Model for n-HgCdTe Photoconducting Infrared Detector

摘要

A multilayer model for the majority carrier distribution is employed to calculate the shunt resistance due to passivant-induced electric field in the accumulated n~+ region. The carrier depth profile drops sharply away from the surface, finally attaining the bulk value. The effect of complete sidewall passivation on the shunt resistance is considered. The results show that if the contribution of sidewall passivation is neglected, the total detector resistance is overestimated by ～35 per cent. The detector responsivity calculations using the present model are compared with the Siliquini's model and the experimental data of Siliquini. It has been found that the present model yields relatively better agreement with the experimental data in shunt-dominated region.