Noise modeling of shunt resistance in HgCdTe photoconductor detectors

摘要

We present the results of noise measurements in n-HgCdTe photoconductor overlap structure detector array. The total measured noise could not be fitted to the well-known expressions of generation-recombination noise (thermal plus background) being the dominating sources in our case. It is observed that an additional noise source attributed to the contribution from the shunt resistance due to accumulation layer at the HgCdTe-anodic oxide interface (front and rear) had to be invoked to fit the data. Additionally, improved bulk detector resistance model including the effect of ambient radiation on the profile of majority carrier distribution along the length of the detector is presented and used for fitting the experimental data.