Performance degradation of GaN HEMTs under accelerated power cycling tests

Chi Xu; Fei Yang; Enes Ugur; Shi Pu; Bilal Akin

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Performance degradation of GaN HEMTs under accelerated power cycling tests

机译：加速功率循环测试下GaN HEMT的性能下降

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摘要

In this paper, performance degradations of enhancement mode (E-mode) gallium nitride (GaN) high-electron-mobility-transistors (HEMTs) under accelerated power cycling tests are presented. For this purpose, a DC power cycling setup is designed to accelerate

机译：本文提出了在加速功率循环测试下增强模式（E模式）氮化镓（GaN）高电子迁移率晶体管（HEMT）的性能下降。为此，直流电源循环设置旨在加速

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来源
《CPSS Transactions on Power Electronics and Applications》 |2018年第4期|269-277|共9页
作者
Chi Xu; Fei Yang; Enes Ugur; Shi Pu; Bilal Akin;
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作者单位

Department of Electrical and Computer Engineering University of Texas at Dallas Richardson USA;

Department of Electrical and Computer Engineering Universi;

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原文格式 PDF
正文语种 eng
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关键词
Gallium nitride; Aging; Leakage currents; Logic gates; Threshold voltage; Switches; HEMTs;

机译：氮化镓老化;漏电流;逻辑门门槛电压;开关;HEMT;
入库时间 2022-08-18 04:34:00

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1. Failure mechanism analysis of off-state drain-to-source leakage current failure of a commercial 650 V discrete GaN-on-Si HEMT power device by accelerated power cycling test [J] . Song S., -Nielsen S. Munk, Uhrenfeldt C. Microelectronics & Reliability . 2017,第sepa期

机译：通过加速功率循环测试分析商用650 V离散型GaN-on-Si HEMT电源器件的断态漏源漏电流故障机理
2. Degradation indicators of power-GaN-HEMT under switching power-cycling [J] . Gonzalez-Sentis M. A., Tounsi P., Bensoussan A., Microelectronics & Reliability . 2019,第Sepa期

机译：开关功率循环下功率GaN-HEMT的退化指标
3. Thermo-Mechanical Reliability and Performance Degradation of a Lead-Free RF Power Amplifier with GaN-on-SiC HEMTs [J] . J. Lang, I. Belov, J. Hellen, Materials science forum . 2017,第期

机译：具有GaN-on-SiC HEMT的无铅RF功率放大器的热机械可靠性和性能下降
4. Investigation of Performance Degradation in Enhancement-Mode GaN HEMTs under Accelerated Aging [C] . Chi Xu, Enes Ugur, Fei Yang, Workshop on Wide Bandgap Power Devices and Applications . 2018

机译：加速老化下增强型GaN HEMT的性能下降研究
5. Insight into the Design, Fabrication, and mm-Wave Power Performance of N-Polar GaN Deep Recess HEMTs [D] . Romanczyk, Brian R. 2018

机译：洞察N极GaN深凹槽垫的设计，制造和MM波功率性能
6. PSX-31 Effects of Dietary Non-starch Polysaccharide (NSP) and NSP-Degrading Enzyme Complex (Endo-PowerTM) Supplementation on Growth Performance Intestinal Environments and Systemic Immune Responses in Growing Pigs. [O] . M Kwak, J Kim, K Sung, 2018

机译：日粮非淀粉多糖（NSP）和NSP降解酶复合物（Endo-PowerTM）补充对生长猪的生长性能肠道环境和全身免疫反应的影响。
7. Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level [O] . Rossetto, I., Meneghini, M., Canato, E., 2017

机译：具有p-GaN栅极的基于GaN的功率HEMT的场驱动和电流驱动退化：取决于Mg掺杂水平
8. Simulation of Life Testing Procedures for Estimating Long-Term Degradation and Lifetime of AlGaN/GaN HEMTs (Postprint) [R] . Heller, E. R. 2009

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Performance degradation of GaN HEMTs under accelerated power cycling tests

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