A parallel deterministic solver for the Schrodinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Mnte-Carlo

摘要

We present a parallel deterministic solver for the Boltzmann-Schroedinger-Poisson system for partially-confined DG-MOSFETs. Our 2D model uses a dimensional coupling: the electrons behave as particles along the longitudinal dimension, and as waves along the transverse dimension. In Ben Abdallah et al. (2009) the authors validated, in a simplified setting, the solver for the eigenproblems. In this paper we have focused on obtaining physically accurate results by introducing a realistic Si conduction band and electron-phonon interactions. We have switched from Cartesian to elliptic variables for the wave vector, and consequently radically rebuilt the time integrator. The code has been parallelized following a domain-decomposition approach. The results have been compared to those given by a Monte-Carlo solver.