Using Quasi-EZ-NAND Flash Memory to Build Large-Capacity Solid-State Drives in Computing Systems

摘要

Future flash-based solid-state drives (SSDs) must employ increasingly powerful error correction code (ECC) and digital signal processing (DSP) techniques to compensate the negative impact of technology scaling on NAND flash memory device reliability. Currently, all the ECC and DSP functions are implemented in a central SSD controller. However, the use of more powerful ECC and DSP makes such design practice subject to significant speed performance degradation and complicated controller implementation. An EZ-NAND (Error Zero NAND) flash memory design strategy is emerging in the industry, which moves all the ECC and DSP functions to each memory chip. Although EZ-NAND flash can simplify controller design and achieve high system speed performance, its high silicon cost may not be affordable for large-capacity SSDs in computing systems. We propose a quasi-EZ-NAND design strategy that hierarchically distributes ECC and DSP functions on both NAND flash memory chips and the central SSD controller. Compared with EZ-NAND design concept, it can maintain almost the same speed performance while reducing silicon cost overhead. Assuming the use of low-density parity-check (LDPC) code and postcompensation DSP technique, trace-based simulations show that SSDs using quasi-EZ-NAND flash can realize almost the same speed as SSDs using EZ-NAND flash, and both can reduce the average SSD response time by over 90 percent compared with conventional design practice. Silicon design at 65 nm node shows that quasi-EZ-NAND can reduce the silicon cost overhead by up to 44 percent compared with EZ-NAND.