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Co-design of application software and NAND flash memory in solid-state drive for relational database storage system

机译:关系数据库存储系统固态驱动器中应用软件和NAND闪存的协同设计

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摘要

A relational database management system (RDBMS) is designed based on NAND flash solid-state drive (SSD) for storage. By vertically integrating the storage engine (SE) and the flash translation layer (FTL), system performance is maximized and the internal SSD overhead is minimized. The proposed RDBMS SE utilizes physical information about the NAND flash memory which is supplied from the FTL. The query operation is also optimized for SSD. By these treatments, page-copy-less garbage collection is achieved and data fragmentation in the NAND flash memory is suppressed. As a result, RDBMS performance increases by 3.8 times, power consumption of SSD decreases by 46% and SSD life time is increased by 61%. The effectiveness of the proposed scheme increases with larger erase block sizes, which matches the future scaling trend of three-dimensional (3D-) NAND flash memories. The preferable row data size of the proposed scheme is below 500 byte for 16 kbyte page size.
机译:设计了基于NAND闪存固态驱动器(SSD)的关系数据库管理系统(RDBMS)进行存储。通过垂直集成存储引擎(SE)和闪存转换层(FTL),可以最大程度地提高系统性能,并使内部SSD开销最小化。提出的RDBMS SE利用了从FTL提供的有关NAND闪存的物理信息。查询操作也针对SSD进行了优化。通过这些处理,实现了无页面复制的垃圾收集,并且抑制了NAND​​闪存中的数据碎片。结果,RDBMS性能提高了3.8倍,SSD的功耗降低了46%,SSD的使用寿命增加了61%。所提出的方案的有效性随着较大的擦除块尺寸而增加,这与三维(3D-)NAND闪存的未来缩放趋势相匹配。对于16 KB页面大小,该方案的首选行数据大小低于500字节。

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  • 来源
    《Japanese journal of applied physics》 |2014年第4s期|04EE09.1-04EE09.8|共8页
  • 作者单位

    Department of Electrical, Electronic and Communication Engineering, Faculty of Science and Engineering, Chuo University, Bunkyo, Tokyo 113-8505, Japan,Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University, Nagano 380-8553, Japan;

    Department of Electrical, Electronic and Communication Engineering, Faculty of Science and Engineering, Chuo University, Bunkyo, Tokyo 113-8505, Japan,Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan;

    Department of Electrical, Electronic and Communication Engineering, Faculty of Science and Engineering, Chuo University, Bunkyo, Tokyo 113-8505, Japan;

    Department of Electrical, Electronic and Communication Engineering, Faculty of Science and Engineering, Chuo University, Bunkyo, Tokyo 113-8505, Japan;

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