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RDIS: Tolerating Many Stuck-At Faults in Resistive Memory

机译:RDIS:容忍电阻存储器中的许多卡在故障

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With their potential for high scalability and density, resistive memories are foreseen as a promising technology that overcomes the physical limitations confronted by charge-based DRAM and flash memory. Yet, a main burden towards the successful adoption and commercialization of resistive memories is their low cell reliability caused by process variation and limited write endurance. Typically, faulty and worn-out cells are permanently stuck at either ‘0’ or ‘1’. To overcome the challenge, a robust error correction scheme that can recover from many hard faults is required. In this paper, we propose and evaluate RDIS , a novel scheme to efficiently tolerate memory stuck-at faults. RDIS allows for the correct retrieval of data by recursively determining and efficiently keeping track of the positions of the bits that are stuck at a value different from the ones that are written, and then, at read time, by inverting the values read from those positions. RDIS is characterized by a very low probability of failure that increases slowly with the relative increase in the number of faults. Moreover, RDIS tolerates many more faults than the best existing scheme—by up to 95 percent on average at the same overhead level.
机译:电阻式存储器具有高可扩展性和高密度的潜力,可以预见它是一种有前途的技术,它将克服基于电荷的DRAM和闪存所面临的物理限制。然而,电阻式存储器成功采用和商业化的主要负担是由于工艺变化和有限的写入耐久性而导致的低单元可靠性。通常,有故障和破损的电池永久卡在“ 0”或“ 1”处。为了克服这一挑战,需要一种可以从许多硬故障中恢复的健壮的纠错方案。在本文中,我们提出并评估了RDIS,RDIS是一种能够有效容忍内存卡住的故障的新方案。 RDIS通过递归确定并有效地跟踪停留在与写入的值不同的值的位的位置,然后在读取时,通过反转从这些位置读取的值,来正确检索数据。 RDIS的特征是故障概率非常低,并且随着故障数量的相对增加而缓慢增加。此外,与最佳现有方案相比,RDIS可以容忍更多的故障-在相同的开销水平下平均平均故障率高达95%。

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