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Capacitive and Inductive TSV-to-TSV Resilient Approaches for 3D ICs

机译:用于3D IC的电容式和电感式TSV至TSV弹性方法

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TSV-to-TSV coupling is known to be a significant detriment to signal integrity in three-dimensional (3D) IC architectures. Designing a reliable Through-Silicon Via is critical in order to support better performance. This paper explores the challenges brought on by capacitive and inductive TSV-to-TSV coupling in TSV-based 3D ICs. Based on our analyses, we propose two approaches to mitigate these effects. In one approach, a novel coding technique that adjusts the current flow pattern is proposed to mitigate the inductive coupling effects. In another approach an alternative architecture, wrapping around the TSVs, is proposed to greatly reduce the capacitive coupling effect. The efficiency of the proposed coding methods and supporting architectures is demonstrated by comprehensive simulations at both the hardware and system levels.
机译:众所周知,TSV到TSV的耦合对三维(3D)IC体系结构中的信号完整性有很大的损害。设计可靠的硅通孔对于支持更好的性能至关重要。本文探讨了基于TSV的3D IC中电容性和电感性TSV-TSV耦合带来的挑战。根据我们的分析,我们提出了两种减轻这些影响的方法。在一种方法中,提出了一种调整电流流动模式的新颖编码技术,以减轻感应耦合效应。在另一种方法中,提出了一种环绕TSV的替代架构,以大大降低电容耦合效应。通过在硬件和系统级别上的全面仿真,证明了所提出的编码方法和支持体系结构的效率。

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