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Predicting future complementary metal–oxide–semiconductor technology – challenges and approaches

机译:预测未来的互补金属氧化物半导体技术–挑战和方法

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Long timescales and complex design processes require that CPU architects and microarchitects have early access to information about future manufacturing processes. In some cases, this means that future technology must be predicted in advance of it actually being developed. In addition, close collaboration with the foundries, known as `Design-Technology Co-Optimisation', or DTCO, allows the mutual influence during development of microarchitecture, physical IP (standard cells and memories), and process technology. This predictive technology, in conjunction with early technology information or not, allow design exploration in the form of trial runs of synthesis, place and route to determine the predicted effects of various technology choices on CPU power, performance, and area.
机译:长时程和复杂的设计过程要求CPU架构师和微体系结构能够及早获得有关未来制造过程的信息。在某些情况下,这意味着未来的技术必须在实际开发之前进行预测。此外,与代工厂的紧密合作(称为“设计技术共同优化”或DTCO)允许在微体系结构,物理IP(标准单元和内存)以及工艺技术的开发过程中相互影响。这种预测技术,无论是否结合早期技术信息,都可以以综合,布局和布线的试运行等形式进行设计探索,以确定各种技术选择对CPU功率,性能和面积的预测影响。

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