COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE, AND METHOD FOR FORMING A METAL OXIDE SEMICONDUCTOR DEVICE AND A COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE

摘要

The method of ion implantation apparatus and manufacturing semiconductor devices is described, wherein implantation ionized boron hydride molecular clusters are to form P-type transistor structure. For example, cluster implantation is to provide p-type doped source and drain electrode structure and for Polygates in manufacture complementation Metal-Oxide semiconductors (CMOS) device; It is crucial formation PMOS transistor for these doping steps. The chemical form BnHx+ and BnHx- of molecular cluster anion, in 10 n 100 and 0≤x≤n+4. It is charged using wafer throughput and improved device generation is increased in this borine cluster result by reducing chip. Therefore, which is significantly reducing manufacturing cost, relative to existing injection technique. A kind of method of manufacturing semiconductor devices, further describe method, include the following steps: to enter ionisation chamber containing multiple dopant atoms in the molecule of supply, the molecular ionization is dopant cluster ion, the grade dopants cluster ion is extracted and accelerated with electric field, it selects desired cluster ion by quality analysis, improve final implant energy collection crowdion by ex-post analysis ion-optical ion-optical, and dopant cluster ion is entered into semiconductor substrate. In general, dopant molecule includes n atoms of dopant, wherein n is greater than 10.This method of integer can be improved dopant dose rate and be implanted into energy to n times implantation current and equivalent every 1/n times of foreign atom energy cluster, while the charge of every dopant atom is by factor N. This is a kind of effective method, for making shallow transistor junction, wherein it is desirable to having low energy often to be implanted into foreign atom.