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A new Control Volume Finite Element Method for the stable and accurate solution of the drift-diffusion equations on general unstructured grids

机译:一种新的控制体积有限元方法,用于稳定,精确地求解一般非结构网格上的扩散方程

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We present a new Control Volume Finite Element Method with multi-dimensional Scharfetter-Gummel upwinding (CVFEM-SG) for the drift-diffusion equations. The method combines a conservative formulation of the carrier density continuity equations with an edge element lifting of the one-dimensional Scharfetter-Gummel edge currents into curl-conforming elemental currents. These elemental currents combine the upwind effect from all element edges and enable accurate computation of the flux on arbitrary surfaces inside the elements. In so doing, we obtain a formulation that is stable and accurate on general unstructured finite element grids. This approach sets our formulation apart from other methods, which require the control volumes to be topologically dual to the primal grid. Numerical studies of the CVFEM-SG for a suite of scalar advection-diffusion test problems confirm the accuracy and the robustness of the new formulation. Simulations of a PN diode and an n-channel MOSFET device demonstrate the performance of the method for the fully coupled drift-diffusion system.
机译:我们提出了一种新的控制体积有限元方法,其中使用了多维Scharfetter-Gummel迎风式(CVFEM-SG)来求解漂移扩散方程。该方法将载流子密度连续性方程的保守公式与将一维Scharfetter-Gummel边缘电流提升为卷曲符合元素电流的边缘元素相结合。这些元素电流结合了来自所有元素边缘的迎风效应,并能够精确计算元素内部任意表面上的通量。通过这样做,我们获得了在一般的非结构化有限元网格上稳定且准确的公式。这种方法使我们的配方与其他方法不同,其他方法要求控制体积在拓扑上对原始网格是双重的。 CVFEM-SG对一组标量对流扩散测试问题的数值研究证实了新配方的准确性和鲁棒性。 PN二极管和n沟道MOSFET器件的仿真证明了该方法在完全耦合漂移扩散系统中的性能。

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