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首页> 外文期刊>Composites Science and Technology >Fluorinated polyimide with polyhedral oligomeric silsesquioxane aggregates: Toward low dielectric constant and high toughness
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Fluorinated polyimide with polyhedral oligomeric silsesquioxane aggregates: Toward low dielectric constant and high toughness

机译:多面体低聚倍半硅氧烷聚集体的氟化聚酰亚胺:介电常数低,韧性高

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摘要

An amphiphilic alternating copolymer with hydrophobic polyhedral oligomeric silsesquioxane (POSS) segments and hydrophilic anhydride segments, which is able to self-assemble into nanoscale POSS aggregates, is introduced into fluorinated polyimide (FPI) films to polish up their toughness while lowering their dielectric constant. The dielectric constant of POSS/FPI composite films with 2.8 wt% amphiphilic alternating copolymer significantly decreases to 2.09 from 3.14 for pure FPI. Furthermore, a sharp brittle-ductile transition is observed in the tensile energy to break versus interparticle distance curve. When the interparticle distance is reduced to 215 nm, the elongation at break and tensile energy to break of POSS/FPI composite films increase to 27.5% and 23.5 MJ/m(3) from 8.3% to 6.8 MJ/m(3) respectively. The tensile-fractured surfaces of POSS/FPI composite films reveal that the toughening mechanism is mainly attributed to the prevention of crack propagation and the debonding of POSS aggregates with a plastic void growth.
机译:具有疏水性多面体低聚倍半硅氧烷(POSS)链段和亲水性酸酐链段的两亲交替共聚物能够自组装成纳米级POSS聚集体,被引入氟化聚酰亚胺(FPI)膜中以增强其韧性,同时降低其介电常数。含2.8 wt%两亲交替共聚物的POSS / FPI复合薄膜的介电常数从纯FPI的3.14显着降低至2.09。此外,在拉伸能中观察到急剧的脆性-延展性转变,以相对于颗粒间的距离曲线。当粒子间距离减小到215 nm时,POSS / FPI复合膜的断裂伸长率和断裂拉伸能分别从8.3%和6.8 MJ / m(3)增加到27.5%和23.5 MJ / m(3)。 POSS / FPI复合膜的拉伸断裂表面表明,增韧机理主要归因于防止裂纹扩展和POSS聚集体与塑性空洞生长的分离。

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