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首页> 外文期刊>IEEE Transactions on Components and Packaging Technologies >Effect of Hygrothermal Aging on Interfacial Reliability of Silicon/Underfill/FR-4 Assembly
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Effect of Hygrothermal Aging on Interfacial Reliability of Silicon/Underfill/FR-4 Assembly

机译:湿热老化对硅/未填充/ FR-4组件界面可靠性的影响

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The reliability issues have been converted to the underfill adjacent interfaces since the introduction of the underfill to flip chip package in 1990''''s. Both thermal cycling and hygrothermal conditioning severely attack the interfaces to delaminate. The moisture migrating into the underfill decreases the adhesion strength, swells to deform the assembly, and weakens the mechanical and thermal properties of the material. In this study, interfacial reliability of a silicon/underfill/FR-4 assembly exposed at 85 $^{circ}{hbox{C}}/85%$RH was studied using moirÉ interferometry and micro-digital image speckle correlation ($mu$-DiSC) techniques. A thermal aging study was simultaneously performed to understand the long-term reliability of the assembly. The results showed that the thermal aging relieved the stresses induced by hygrothermal swelling mismatch between dissimilar materials involved, whereas increased the strains induced by hygrothermal swelling. It indicated the time effect is not negligible when the assembly is subjected to the moisture conditioning, otherwise, the deformation induced by the swelling could be overestimated. The $mu$-DiSC technique was applied to measure the critical interfacial fracture toughness of the silicon/underfill interface. The results showed that the moisture could significantly reduce the interfacial strength due to the break of hydrogen bonding. By combining the moirÉ and $mu$-DiSC results, it was concluded that the hygrothermal loading could increase the possibility of interfacial delamination in a flip chip package. Finally, the morphologies of the fractured surface were studied with the aid of scanning electron microscope. Remarkable changes of the failure mode were observed.
机译:自从1990年代将底部填充材料引入倒装芯片封装以来,可靠性问题已转变为底部填充材料相邻的接口。热循环和湿热调节都严重侵蚀界面以致分层。水分迁移到底部填充物中会降低粘合强度,膨胀会使组件变形,并削弱材料的机械和热学性能。在这项研究中,使用莫尔干涉测量法和微数字图像斑点相关性($μm)研究了暴露在85 $ ^ {circ} {hbox {C}} / 85%$ RH下的硅/底部填充/ FR-4组件的界面可靠性。 $ -DiSC)技术。同时进行了热老化研究,以了解组件的长期可靠性。结果表明,热老化消除了不同材料之间的湿热膨胀失配引起的应力,而增加了湿热膨胀引起的应变。这表明在对组件进行湿度调节时,时间效应不可忽略,否则,可能会高估由溶胀引起的变形。使用μ-DiSC技术来测量硅/底部填充界面的临界界面断裂韧性。结果表明,水分会由于氢键的断裂而显着降低界面强度。通过将莫尔和μ-DiSC结果结合起来,得出的结论是,湿热载荷可能会增加倒装芯片封装中界面分层的可能性。最后,借助扫描电子显微镜研究了断裂表面的形貌。观察到故障模式的显着变化。

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