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首页> 外文期刊>Components, Packaging and Manufacturing Technology, IEEE Transactions on >Fabrication and Characterization of Polymer-Enhanced TSVs, Inductors, and Antennas for Mixed-Signal Silicon Interposer Platforms
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Fabrication and Characterization of Polymer-Enhanced TSVs, Inductors, and Antennas for Mixed-Signal Silicon Interposer Platforms

机译:用于混合信号硅中介层平台的聚合物增强型TSV,电感器和天线的制造和表征

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摘要

This paper demonstrates the fabrication and high-frequency characterization of polymer-enhanced technologies for a mixed-signal silicon interposer platform. First, the fabrication of 60--diameter and 285--tall photodefined polymer-embedded vias is demonstrated. Their losses are extracted using L–2L and open–short de-embedding techniques up to 30 GHz followed by parasitics extraction. Moreover, eye-diagram measurements are demonstrated for the vias at 10 Gb/s. Second, the fabrication and impedance extraction of 65--diameter and 285--tall photodefined polymer-enhanced coaxial vias are demonstrated. Finally, utilizing the photodefined polymer-enhanced silicon interposer technology, high-performance inductor and antenna are demonstrated over polymer wells.
机译:本文演示了混合信号硅中介层平台的聚合物增强技术的制造和高频特性。首先,演示了60直径和285英寸高的光定义聚合物嵌入通孔的制造。利用L-2L和开放短时去嵌入技术(高达30 GHz)提取其损耗,然后进行寄生提取。此外,以10 Gb / s的速度演示了通孔的眼图测量。其次,演示了直径为65和285的光定义聚合物增强同轴通孔的制造和阻抗提取。最后,利用光敏聚合物增强的硅中介层技术,在聚合物阱上演示了高性能电感器和天线。

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