Hamming Distance Computation in Unreliable Resistive Memory

摘要

Enabled by new storage mediums, Computation-in-Memory is a novel architecture that has shown great potential in reducing the burden of massive data processing by bypassing the communication and memory access bottleneck. Suggested by Cassuto and Crammer, allowing for ultra-fast Hamming distance computations to be performed in resistive memory with low-level conductance measurements has the potential to drastically speed up many modern machine learning algorithms. Meanwhile, Hamming distance Computation-in-Memory remains a challenging task as a result of the non-negligible device variability in practical resistive memory. In this paper, build upon the work of Cassuto and Crammer, we study memristor variability due to two distinct sources: resistance variation, and the non-deterministic write process. First, we introduce a technique for estimating the Hamming distance under resistance variation alone. Then, we propose error-detection and error-correction schemes to deal with non-ideal write process. We then combine these results to concurrently address both sources of memristor variabilities. In order to preserve the low latency property of Computation-in-Memory, all of our approaches rely on only a single vector-level conductance measurement. We use so-called inversion coding as a key ingredient in our solutions and we prove the optimality of this code given the restrictions on bit-accessible information. Finally, we demonstrate the efficacy of our approaches on the k-nearest neighbors classifier.