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Method of conditioning resistive memory cells of memory array, involves applying pulse to unreliable cell such that pulse shifts resistance respectively associated with unreliable cell to predetermined reliable resistance range
Method of conditioning resistive memory cells of memory array, involves applying pulse to unreliable cell such that pulse shifts resistance respectively associated with unreliable cell to predetermined reliable resistance range
The group of resistive memory cells (102) is accessed. A pulse is applied to unreliable cell such that the pulse shifts the resistance respectively associated with unreliable cell to a predetermined reliable resistance range.
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