1 V Rectifier Based on Bulk-Driven Quasi-Floating-Gate Differential Difference Amplifiers

摘要

This paper presents experimental results for a low-voltage (LV) low-power (LP) voltage rectifier realization, employing two differential difference amplifiers (DDA) as active elements.The proposed DDA is based on the recently presented technique named bulk-driven quasi-floating-gate that enables the circuit to work with 1 V power supply voltage, threshold-to-supply ( / ratio and modulation index factor equal to 70 and 90 %, respectively. The competitive features of the proposed structure compared with other state-of-the-art circuits are the capability for working under LV supply, with extended common mode voltage range and improved input transconductance. The proposed circuit was designed, simulated, and fabricated employing the Cadence platform and MOS transistors models provided by the 0.35 m CMOS AMIS process. The total chip area was 213 266 . The provided simulation and experimental results prove the attractive performances of the proposed rectifier topology.