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A Low-Power and High-Gain Ultra-Wideband Down-Conversion Active Mixer in 0.18-m SiGe Bi-CMOS Technology

机译:采用0.18m SiGe Bi-CMOS技术的低功耗,高增益超宽带下变频有源混频器

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摘要

This paper presents an ultra-wideband down-conversion mixer chip covering the frequency range from 3.1 to 10.6 GHz by using TSMC 0.18 m SiGe BiCMOS technology. The architecture used is based on Gilbert-cell mixer, the combination of MOS transistors and HBT BJT transistor device characteristics. In the proposed circuit, a LO CMOS series-parallel switched topology is adopted to reduce the supply voltage and dc consumption for UWB system. The measured results of the proposed mixer achieve: -10.6 dB, dB, IIP dBm at 7.26 GHz, and so on. Port-to-port isolations (LO-RF, LO-IF, and RF-IF) are better than about -40 dB, and the total dc power consumption with output buffers is 4.3 mW from a 1 V supply voltage. The current output buffer is about 3.7 mW. The mixer topology presented in this paper results suitable for low-power UWB system applications.
机译:本文提出了一种采用TSMC 0.18 m SiGe BiCMOS技术的超宽带下变频混频器芯片,其覆盖范围为3.1至10.6 GHz。使用的架构基于吉尔伯特单元混频器,MOS晶体管和HBT BJT晶体管器件特性的组合。在所提出的电路中,采用LO CMOS串联-并联开关拓扑来降低UWB系统的电源电压和dc消耗。提出的混频器的测量结果达到:-10.6 dB,dB,7.26 GHz时的IIP dBm等。端口到端口的隔离度(LO-RF,LO-IF和RF-IF)优于-40 dB,并且从1 V电源电压输出缓冲器的总直流功耗为4.3 mW。当前的输出缓冲器约为3.7 mW。本文介绍的混频器拓扑结构适用于低功耗UWB系统应用。

著录项

  • 来源
    《Circuits, systems, and signal processing》 |2017年第7期|2635-2653|共19页
  • 作者

    Chen Jun-Da; Wang Song-Hao;

  • 作者单位

    Natl Quemoy Univ, Dept Elect Engn, Univ Rd 1, Jinning Township 892, Kinmen, Taiwan;

    Natl Quemoy Univ, Dept Elect Engn, Univ Rd 1, Jinning Township 892, Kinmen, Taiwan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    SiGe; BiCMOS; Gilbert-cell mixers; UWB; IIP3;

    机译:SiGe;BiCMOS;吉尔伯特单元混频器;UWB;IIP3;

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