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首页> 外文期刊>IEEE Circuits & Devices >Coupling effects on wire delay. Challenges in deep submicron VLSI design
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Coupling effects on wire delay. Challenges in deep submicron VLSI design

机译:耦合对导线延迟的影响。深亚微米VLSI设计面临的挑战

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摘要

Coupling is a complex phenomenon, especially where the high-gain coupling effect is concerned. To introduce coupling effects on wire delay, including the high-gain coupling effect, this article presents a generalization of a study that evolved from a real VLSI design. Possible solutions to coupling effects such as CAD tools, circuit design methodology, and circuit design techniques are also discussed. The conclusions and results presented in this article are based on current complementary metal oxide semiconductor (CMOS) technologies.
机译:耦合是一个复杂的现象,尤其是在涉及高增益耦合效应的情况下。为了介绍对线延迟的耦合效应,包括高增益耦合效应,本文介绍了从实际VLSI设计演变而来的研究的一般情况。还讨论了耦合效果的可能解决方案,例如CAD工具,电路设计方法和电路设计技术。本文提供的结论和结果基于当前的互补金属氧化物半导体(CMOS)技术。

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