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Design of energy-efficient and robust ternary circuits for nanotechnology

机译:纳米技术的高能效鲁棒三元电路设计

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Novel high-performance ternary circuits for nanotechnology are presented here. Each of these carbon nanotube field-effect transistor (CNFET)-based circuits implements all the possible kinds of ternary logic, including negative, positive and standard ternary logics, in one structure. The proposed designs have good driving capability and large noise margins and are robust. These circuits are designed based on the unique properties of CNFETs, such as the capability of setting the desired threshold voltage by changing the diameters of the nanotubes. This property of CNFETs makes them very suitable for the multiple-Vt design method. The proposed circuits are simulated exhaustively, using Synopsys HSPICE with 32 nm-CNFET technology in various test situations and different supply voltages. Simulation results demonstrate great improvements in terms of speed, power consumption and insusceptibility to process variations with respect to other conventional and state-of-the-art 32 nm complementary metal-oxide semiconductor and CNFET-based ternary circuits. For instance at 0.9 V, the proposed ternary logic and arithmetic circuits consume on average 53 and 40 less energy, respectively, compared to the CNFET-based ternary logic and arithmetic circuits, recently proposed in the literature.
机译:本文介绍了用于纳米技术的新型高性能三元电路。这些基于碳纳米管场效应晶体管(CNFET)的电路均以一种结构实现了所有可能的三元逻辑,包括负,正和标准三元逻辑。所提出的设计具有良好的驱动能力和较大的噪声容限并且坚固。这些电路是基于CNFET的独特属性设计的,例如通过更改纳米管直径来设置所需阈值电压的能力。 CNFET的这种特性使其非常适合于多重 V t 设计方法。使用Synopsys HSPICE和32 nm-CNFET技术在各种测试情况和不同的电源电压下,对提出的电路进行了详尽的仿真。仿真结果表明,相对于其他传统的和最新的32 nm互补金属氧化物半导体和基于CNFET的三元电路,在速度,功耗和对工艺变化的敏感性方面都取得了巨大的进步。例如,在0.9 V时,与最近在文献中提出的基于CNFET的三元逻辑和算术电路相比,所建议的三元逻辑和算术电路分别平均少消耗53和40的能量。

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