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1.2 V, 12.5 MHz fourth-order low-pass filter with 83 dB stopband attenuation using low output impedance source follower in 45 nm CMOS

机译:在45 nm CMOS中使用低输出阻抗源跟随器,具有83 dB阻带衰减的1.2 V,12.5 MHz四阶低通滤波器

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摘要

A source follower with improved output resistance is proposed. This improvement is achieved using shunt-shunt feedback with the help of a voltage combiner in the feedback loop which helps not only enhancing the gain but achieving reduced distortion due to improved isolation. A high-performance Sallen-Key biquad is implemented using this improved source follower and two capacitors which offer 29.3 MHz of bandwidth and almost 50 dB of stopband attenuation with the power of 2.3 mW. A fourth-order Chebyshev low-pass filter prototype is designed with a cascade of two such biquads in 45 nm complementary metal-oxide-semiconductor (CMOS). A cut-off frequency of 12.4 MHz is obtained with a stopband rejection of more than 83 dB. The power dissipation of the filter is 5.1 mW, at 1.2 V supply, and achieves an in-band third-order intercept point of +26.8 dBm. The in-band input-referred noise is 3.4(uV/√(Hz)), resulting in a dynamic range of 78.1 dB.
机译:提出了一种具有改善的输出电阻的源极跟随器。通过在反馈回路中使用电压组合器,使用并联反馈来实现此改进,这不仅有助于提高增益,而且由于隔离度的提高而有助于减少失真。使用此改进的源极跟随器和两个电容器可实现高性能的Sallen-Key双二阶,该电容器可提供29.3 MHz的带宽和几乎50 dB的阻带​​衰减,功率为2.3 mW。设计了四阶Chebyshev低通滤波器原型,并在45 nm互补金属氧化物半导体(CMOS)中级联了两个这样的双二阶。获得的截止频率为12.4 MHz,阻带抑制大于83 dB。在1.2 V电源下,滤波器的功耗为5.1 mW,并实现了+26.8 dBm的带内三阶交调点。带内输入参考噪声为3.4(uV /√(Hz)),动态范围为78.1 dB。

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