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Design of a voltage-programmed VTH compensating pixel circuit for AMOLED displays using diode-connected a-IGZO TFT

机译:使用二极管连接A-IGZO TFT设计用于AMOLED显示器的电压编程VTH补偿像素电路

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摘要

This study presents a novel voltage-programmed, amorphous-indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT)-based active-matrix organic light-emitting diode (AMOLED) pixel circuit. The circuit utilises the threshold voltage (V-TH) sensing ability of a diode-connected transistor to compensate for the spatial as well as the temporal variation of the threshold voltage of the driving transistor and supply a constant current to the OLED. The circuit has been simulated in Cadence Spectre using a-IGZO TFT and OLED simulation program with integrated circuit emphasis (SPICE) models, and the analysis is presented to prove theV(TH)compensating capability of the proposed circuit. For small currents, about 50 nA, the error is suppressed to <9% whereas for large currents, about 2.5 mu A, the error is only 1.05%. This performance has been achieved using only five TFTs and two storage capacitors.
机译:该研究介绍了一种新型电压编程的无定形铟 - 镓 - 氧化锌(A-IGZO)薄膜晶体管(TFT),基于主动矩阵有机发光二极管(AMOLED)像素电路。该电路利用二极管连接晶体管的阈值电压(V-Th)感测能力,以补偿驱动晶体管的阈值电压的空间和时间变化,并为OLED提供恒定电流。使用具有集成电路强调(SPICE)模型的A-IGZO TFT和OLED仿真程序在Cadence Specter中模拟了电路,并提出了分析以证明所提出的电路的DV(Th)补偿能力。对于小电流,约50纳,误差被抑制到<9%,而对于大电流,约2.5亩,误差仅为1.05%。这种性能仅使用五个TFT和两个存储电容来实现。

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