Three-state dynamic random-access memory (DRAM)

摘要

This work shows the design of three-valued dynamic random-access memory (DRAM) cell using quantum dot gate field effect transistor. DRAM is very popular for increasing device integration in integrated circuits. Storing multiple numbers of bits in a single DRAM cell increases the device integration further. The process technology is compatible with the conventional silicon process. The various write and read operations of the three-value DRAM cell are also discussed in this work.