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首页> 外文期刊>Circuits and Systems II: Express Briefs, IEEE Transactions on >A 2.4-GHz Extended-Range Type-I $SigmaDelta$ Fractional-$N$ Synthesizer With 1.8-MHz Loop Bandwidth and $-$110-dBc/Hz Phase Noise
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A 2.4-GHz Extended-Range Type-I $SigmaDelta$ Fractional-$N$ Synthesizer With 1.8-MHz Loop Bandwidth and $-$110-dBc/Hz Phase Noise

机译:具有1.8MHz环路带宽和$-$ 110dBc / Hz相位噪声的2.4GHz扩展范围I型$ SigmaDelta $小数$ N $合成器

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摘要

Low-power low-loop-bandwidth (BW) integer-$N$ frequency synthesizers with low phase noise have been reported previously. However, achieving similar power/phase-noise performance for a fractional-$N$ synthesizer with a wide loop BW along with excellent spur performance has been challenging. A conventional fractional-$N$ synthesizer is clocked by a crystal oscillator operating at a reference frequency $(f_{rm ref})$ less than a few tens of megahertz. An attractive alternative is to replace the low-frequency crystal oscillator with an integer-$N$ phase-locked loop operating at an $f_{rm ref}$ of a few hundreds of megahertz. The advantages and challenges of designing such a wide-loop-BW fractional-$N$ synthesizer for low phase noise, spur, and power consumption are considered, and an extended-phase-range type-I $SigmaDelta$ fractional-$N$ frequency synthesizer is implemented with an optimal $f_{rm ref}$ of 290 MHz. Measurement results show that the synthesizer operating at 2.4 GHz with a wide loop BW of 1.8 MHz attains an in-band phase noise of $-$110 dBc/Hz and a worst case fractional spur of $-$69 dBc. The digital-intensive 0.18-$muh-n-nbox{m}$ CMOS design consumes 14.1 mW. No quantization noise cancellation or charge pump linearization techniques are used.
机译:先前已经报道了具有低相位噪声的低功率低环路带宽(BW)整数-N $频率合成器。但是,对于具有宽环路带宽和出色的杂散性能的分数N $$合成器,要达到类似的功率/相位噪声性能一直是一项挑战。常规的分数-$ N $合成器由在小于几十兆赫兹的参考频率$(f_ {rm ref})$操作的晶体振荡器提供时钟。一个有吸引力的替代方法是用整数N $锁相环代替低频晶体振荡器,该整数N $锁相环以几百兆赫兹的频率工作。考虑了设计用于低相位噪声,杂散和功耗的宽环路带宽BW分数-$ N $合成器的优点和挑战,并考虑了扩展相位范围的I型$ SigmaDelta $分数-$ N $频率合成器以290 MHz的最佳$ f_ {rm ref} $实现。测量结果表明,工作在2.4 GHz且带宽带宽为1.8 MHz的合成器的带内相位噪声为$-$ 110 dBc / Hz,最坏情况下的杂散为$-$ 69 dBc。数字密集型0.18- $ muh-n-nbox {m} $ CMOS设计消耗14.1 mW。没有使用量化噪声消除或电荷泵线性化技术。

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