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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >Closed-Loop Nonlinear Modeling of Wideband$SigmaDelta$Fractional-$N$Frequency Synthesizers
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Closed-Loop Nonlinear Modeling of Wideband$SigmaDelta$Fractional-$N$Frequency Synthesizers

机译:宽带$ SigmaDelta $ Fractional- $ N $频率合成器的闭环非线性建模

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Wideband low-noise$SigmaDelta$fractional-$N$synthesizers pose several design challenges due to the nonlinear time-varying nature of synthesizer building blocks such as phase frequency detectors (PFDs), charge pump, and frequency dividers. Loop nonlinearities can increase close-in phase noise and enhance spurious tones due to intermodulation of high-frequency quantization noise and tonal content; therefore, an accurate simulation model is critical for successful implementation of loop parameters and bandwidth widening techniques. In this paper a closed-loop nonlinear simulation model for fractional-$N$synthesizers is presented. Inherent nonuniform sampling of the PFD is modeled through an event-driven dual-iteration-based technique. The proposed technique generates a vector of piecewise linear time–voltage pairs, defining the voltage-controlled oscillator (VCO) control voltage. This method also lends itself to modeling of cyclostationary thermal and flicker noise generated by time-varying charge-pump current pulses. A flexible third-order$SigmaDelta$modulated RF synthesizer core with integrated loop filter and LC-tank VCO is designed and fabricated in 0.13-$muhbox m$CMOS process in order to validate the technique experimentally. The proposed modeling technique was able to predict in-band spur power levels with 1.8-dB accuracy, and spur frequency offsets with lower than 400-Hz accuracy with several programmable nonidealities enabled.
机译:宽带低噪声SigmaDelta分数-N $合成器由于诸如相位频率检测器(PFD),电荷泵和分频器之类的合成器构件的非线性时变特性而带来了一些设计挑战。环路非线性会由于高频量化噪声和音调内容的互调而增加近相噪声并增强杂散音。因此,准确的仿真模型对于成功实施环路参数和带宽扩展技术至关重要。本文提出了分数-$ N $合成器的闭环非线性仿真模型。 PFD的固有非均匀采样是通过基于事件驱动的基于双重迭代的技术建模的。所提出的技术生成分段线性时间-电压对的向量,从而定义压控振荡器(VCO)控制电压。这种方法还有助于对由时变电荷泵电流脉冲产生的循环平稳的热和闪烁噪声进行建模。设计并制造了具有集成环路滤波器和LC储罐VCO的灵活的三阶SigmaDelta调制RF合成器内核,并采用0.13-muhbox m $ CMOS工艺制造并进行了实验验证。所提出的建模技术能够以1.8dB的精度预测带内杂散功率电平,并在启用了多个可编程非理想性的情况下以低于400Hz的精度预测杂散频率偏移。

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