A 0.33-V, 500-kHz, 3.94-$muhbox{W}$ 40-nm 72-Kb 9T Subthreshold SRAM With Ripple Bit-Line Structure and Negative Bit-Line Write-Assist

摘要

This paper presents an ultra-low-power 72-Kb 9T static random-access memory (SRAM) with a ripple bit-line (RPBL) structure and negative bit-line (NBL) write-assist. The RPBL scheme provides over 40% read access performance improvement for VDD below 0.4 V compared with the conventional hierarchical bit-line structure. A variation-tolerant ripple-initiated NBL write-assist scheme with the transient negative pulse coupled only into the single selected local bit-line segment is employed to enhance the NBL, boosting efficiency and reducing power consumption. The $331 times 385 muhbox{m}^{2}$ 72-Kb SRAM macro has been fabricated in UMC 40-nm low-power CMOS technology and was tested with full suites of SRAM compiler qualification patterns. Error-free full functionality without redundancy is achieved from 1.5 V down to 0.33 V. The measured maximum operation frequency is 220 MHz (500 kHz) at 1.1 V (0.33 V) and 25 $^{ circ}hbox{C}$. The measured total power consumption is 3.94 $ muhbox{W}$ at 0.33 V, 500 kHz, and 25 $^{circ}hbox{C}$ .