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Low-Voltage CMOS Differential Logic Style With Supply Voltage Approaching Device Threshold

机译:电源电压接近器件阈值的低压CMOS差分逻辑样式

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This brief describes a novel low-voltage CMOS differential logic operating with supply voltage approaching the MOS threshold voltage. The proposed logic style improves switching speed by boosting the gate–source voltage of transistors along timing-critical signal paths. The logic style also minimizes area overhead by allowing a single boosting circuit to be shared by complementary outputs. Test sets of logic gates were designed in a 0.18- $muhbox{m}$ CMOS process, whose comparison results indicated that the energy–delay product of the proposed logic style was improved by up to 86% compared with conventional logic styles at supply voltage ranging from 0.4 to 1.2 V. The experimental result for a 64-bit adder designed using the proposed logic style revealed an addition time of 4.8 ns at 0.5-V supply with 31 pJ at 100 MHz.
机译:本简介描述了一种新颖的低压CMOS差分逻辑,其工作电压接近MOS阈值电压。所提出的逻辑样式通过提高沿时序关键信号路径的晶体管的栅极-源极电压来提高开关速度。逻辑样式还允许互补输出共享单个升压电路,从而最大程度地减少了面积开销。逻辑门的测试集是在0.18-muhbox {m} $ CMOS工艺中设计的,其比较结果表明,在电源电压下,与传统逻辑样式相比,所建议的逻辑样式的能量延迟积最多可提高86%。范围从0.4到1.2V。使用建议的逻辑样式设计的64位加法器的实验结果表明,在0.5 V电源下的相加时间为4.8 ns,在100 MHz时为31 pJ。

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