首页> 外文期刊>Circuits and Systems II: Express Briefs, IEEE Transactions on >A Fifth-Order 20-MHz Transistorized-$LC$ -Ladder LPF With 58.2-dB SFDR, 68-$muhbox{W/Pole/MHz}$ Efficiency, and 0.13-$hbox{mm}^{2}$ Die Size in 90-nm CMOS
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A Fifth-Order 20-MHz Transistorized-$LC$ -Ladder LPF With 58.2-dB SFDR, 68-$muhbox{W/Pole/MHz}$ Efficiency, and 0.13-$hbox{mm}^{2}$ Die Size in 90-nm CMOS

机译:具有58.2-dB SFDR,68- $ muhbox {W / Pole / MHz} $效率和0.13- $ hbox {mm} ^ {2} $芯片尺寸的五阶20MHz晶体管化$ LC $梯形LPF在90纳米CMOS中

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A novel transistorized-$LC$-ladder low-pass filter (LPF) is realized by combining source followers with $Q$-enhanced floating differential active inductors. It features a small number of active devices to minimize the sources of nonlinearity and noise and a robust frequency response against process variations and device mismatches. A fifth-order 20-MHz LPF prototype is fabricated in 90-nm CMOS. It measures a 58.2-dB spurious-free dynamic range with 6.8 mW of power, which corresponds to a selectivity efficiency of 68-$mu hbox{W}/hbox{pole}/hbox{MHz}$ favorably comparable with the state of the art. The die size is merely 0.13 $hbox{mm}^{2}$.
机译:通过将源极跟随器与增强了$ Q $的浮动差分有源电感器组合在一起,可以实现一种新颖的晶体管化$ LC $梯形低通滤波器(LPF)。它具有少量有源器件,可最大程度地减少非线性和噪声源,并具有针对工艺变化和器件失配的稳健频率响应。在90nm CMOS中制造了5阶20MHz LPF原型。它以6.8 mW的功率测量58.2 dB的无杂散动态范围,对应于68- $ mu hbox {W} / hbox {pole} / hbox {MHz} $的选择性效率,可与艺术。芯片尺寸仅为0.13 $ hbox {mm} ^ {2} $。

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