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首页> 外文期刊>Circuits and Systems II: Express Briefs, IEEE Transactions on >A 4.1-mW 3.5-GS/s 6-Bit Time-Interleaved ADC in 40-nm CMOS
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A 4.1-mW 3.5-GS/s 6-Bit Time-Interleaved ADC in 40-nm CMOS

机译:采用40nm CMOS的4.1mW 3.5-GS / s 6位时间交错ADC

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This brief presents an improved timing scheme for a 4 $times$ interleaved 6-bit pipelined binary search (PLBS) analog-to-digital converter (ADC). The individual channel consists of a calibrated fully dynamic PLBS architecture with a 1-bit folding front-end. This work enhances the ADC conversion rate up to 3.5 GS/s, for 4.1-mW power consumption. The peak spurious-free dynamic range and signal-to-noise-plus-distortion ratio (SNDR) are 44.1 and 31.2 dB, respectively, measured for low input frequency. With near-Nyquist input frequency, the SNDR drops to 29.5 dB, yielding an energy-per-conversion step of 48 fJ. The prototype has been fabricated in a 40-nm low-power digital CMOS process. The ADC active area is $250 times 120 muhbox{m}^{2}$.
机译:本简介为4 x交错6位流水线二进制搜索(PLBS)模数转换器(ADC)提供了一种改进的定时方案。各个通道由经过校准的全动态PLBS体系结构和一个1位折叠前端组成。这项工作将ADC转换速率提高到3.5 GS / s,功耗为4.1 mW。在低输入频率下测得的峰值无杂散动态范围和信噪比失真比(SNDR)分别为44.1 dB和31.2 dB。在接近奈奎斯特(Nyquist)输入频率的情况下,SNDR降至29.5 dB,每次转换能量步长为48 fJ。该原型采用40纳米低功耗数字CMOS工艺制造。 ADC活动区域为$ 250乘以120 muhbox {m} ^ {2} $。

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