Design Techniques for a 30-ns Access Time 1.5-V 200-KB Embedded EEPROM Memory

摘要

A 200-KB embedded electrically erasable programmable READ-only memory (EEPROM), which operates with a single 1.5-V power supply voltage based on an HHGRACE (Shanghai Huahong Grace Semiconductor Manufacturing Corporation) 90-nm EEPROM process, is developed. In this brief, several key design techniques are presented. An improved bit cell with a larger current sensing window is adopted in the split-source EEPROM array. To get high-speed READ operation, a high-performance sense amplifier and a dynamic sensing window tracking reference voltage generating circuit have been proposed. The die size of the proposed EEPROM IP is 1.271 mm2, and the EEPROM cell size is 0.32 μm2. Access time of 30 ns is achieved at 1.5 V and 25 °C.