DM Interference Propagation Mathematical Modeling in SiC Wirebond Multichip Power Module

摘要

In this brief, a novel differential-mode (DM) interference propagation mathematical modeling method based on parasitic inductive coupling theory for SiC wirebond multichip power module (SWMPM) with adjacent decoupling capacitor is proposed. Based on the proposed model, the strong and weak inductive coupling theory of DM interference equivalent circuit is proposed. And the influence of different position of decoupling capacitors on DM equivalent current is mathematically analyzed. A custom-made 1.2kV 160A power module based on DM interference optimized layout is built. It is compared with a commercial SiC power module, which can verify the feasibility and validity of the theoretical analysis.