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An 8-Bit 2.1-mW 350-MS/s SAR ADC With 1.5 b/cycle Redundancy in 65-nm CMOS

机译:一个8位2.1-MW 350-MS / S SAR ADC,65-NM CMOS中的1.5 B /周期冗余

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摘要

This brief presents an 8-bit 350-MS/s successive approximation register (SAR) analog-to-digital converter (ADC) with 1.5 b/cycle redundancy in 65-nm CMOS. With 12.5% redundancy in conversion cycles, conversion errors caused by capacitor mismatch, offset and DAC settling errors can be addressed. Compared to the conventional 1.5 b/cycle operation, the proposed switching removes the pre-set phase and thus reduces the speed and power penalty. Besides, with this switching scheme, only two reference voltages are needed instead of five in the conventional scheme. The prototype achieves 45.7 dB SNDR at Nyquist input and consumes 2.1 mW from a 1.2 V supply, resulting in a Walden FoM of 38.1 fJ/conversion-step.
机译:此简报介绍了8位350 - MS / S连续近似寄存器(SAR)模数转换器(ADC),在65-NM CMOS中为1.5 B /循环冗余。随着转换周期的12.5%冗余,可以解决由电容器不匹配,偏移和DAC稳定误差引起的转换误差。与传统的1.5 B /循环操作相比,所提出的切换消除了预设相位,从而降低了速度和功率损失。此外,通过该切换方案,在传统方案中仅需要两个参考电压而不是五个。原型达到45.7 dB的SNDR,奈奎斯特输入,从1.2 V供应消耗2.1兆瓦,导致38.1 FJ /转换步骤的瓦尔登FOM。

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  • 作者单位

    Shaanxi Key Laboratory of Integrated Circuits and Systems School of Microelectronics Xidian University Xi’an China;

    Shaanxi Key Laboratory of Integrated Circuits and Systems School of Microelectronics Xidian University Xi’an China;

    Shaanxi Key Laboratory of Integrated Circuits and Systems School of Microelectronics Xidian University Xi’an China;

    Shaanxi Key Laboratory of Integrated Circuits and Systems School of Microelectronics Xidian University Xi’an China;

    Shaanxi Key Laboratory of Integrated Circuits and Systems School of Microelectronics Xidian University Xi’an China;

    Shaanxi Key Laboratory of Integrated Circuits and Systems School of Microelectronics Xidian University Xi’an China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Switches; Capacitors; Capacitance; Redundancy; Linearity; Prototypes;

    机译:开关;电容;电容;冗余;线性;原型;原型;

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