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Untrimmed BGR of 1.1% 3σ Based on Dynamic-Biased Op Amp With Reduced Voff

机译:基于带有减少的Voff的动态偏置的运算放大器,未经限制的BGR为1.1%3σ

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This brief presents an untrimmed sub-1V CMOS bandgap reference (BGR) where a dynamic-biased error amplifier (EA) is invented to accomplish small input-referred offset voltage (V-off) and improve PSRR of BGR. In the dynamic-biased EA, an intended negative-feedback loop does dominantly work on the reduction of V-off and supply noise influx. Simulation results confirm that V-off of the proposed EA represents 2.3% distribution whereas each V-off of the separate biased EA and the conventional EA shows 4.8% and 15% distributions, respectively. And the PSRR of the proposed EA-based BGR is increased by 23 dB comparing with the separate biased EA-based BGR around 2.5 MHz, and by 34 dB comparing with the conventional biased EA-based BGR around 1 MHz. By adopting the proposed feedback-biased EA, the 40-nm CMOS BGR circuit has been implemented to achieve superior 3 sigma inaccuracy of 1.1% and temperature variation of 13 ppm/degrees C without trimming.
机译:本简述介绍了一个未经监控的Sub-1V CMOS带隙参考(BGR),其中发明了动态偏置误差放大器(EA)以完成小的输入参考偏移电压(V-OFF​​)并改善BGR的PSRR。在动态偏置的EA中,预期的负反馈回路在减少V-OFF​​和供应噪声流量的降低方面是显着的。仿真结果证实,所提出的EA的V-OFF​​表示2.3%的分布,而单独的偏置EA和传统EA的每个V-OFF​​分别显示4.8%和15%的分布。和基于EA的BGR的PSRR增加了23dB,与2.5MHz的单独的偏置EA为基于EA的BGR相比,与常规偏置的基于EA的BGR约为1MHz,比较34dB。通过采用所提出的反馈偏置EA,已经实现了40-NM CMOS BGR电路以实现13ppm /℃的温度变化的优异3 sigma不准确性而无需修剪。

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