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A 2-GHz FBAR-Based Transformer Coupled Oscillator Design With Phase Noise Reduction

机译:基于2 GHz FBAR的变压器耦合振荡器设计,具有降低相位噪声的功能

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The oscillator architecture is proposed to reduce the close-in phase noise as well as power consumption. The proposed Colpitts oscillator removes the current source which is the main source of the 1/f noise conversion. The removal of the current source is compensated by using the transformer and cross-coupled capacitors. The 2-GHz film bulk acoustic resonator (FBAR) is used for the high Q frequency selective elements in the oscillator design. According to measurement results, this FBAR-based oscillator shows >= 10 dB reduction in close-in phase noise. Specifically, 12-dB lower phase noise is achieved at 100 Hz offset frequency. Measured power consumption is 350 uW, which is almost half of the conventional Colpitts oscillator using same FBAR device.
机译:提出了振荡器架构,以减少近相噪声以及功耗。提出的Colpitts振荡器消除了电流源,该电流源是1 / f噪声转换的主要源。通过使用变压器和交叉耦合电容器可以补偿电流源的移除。 2 GHz薄膜体声谐振器(FBAR)用于振荡器设计中的高Q频率选择元件。根据测量结果,该基于FBAR的振荡器显示出近相位噪声降低> = 10 dB。具体而言,在100 Hz偏移频率下可获得12 dB的较低相位噪声。测得的功耗为350 uW,几乎是使用同一FBAR器件的传统Colpitts振荡器的一半。

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